SOLUBILITY OF HYDROGEN IN SILICON AT 1300-DEGREES-C

被引：30

作者：

MCQUAID, SA

BINNS, MJ

NEWMAN, RC

LIGHTOWLERS, EC

CLEGG, JB

机构：

[1] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

[3] HULS UK LTD,DIV MEM C,MILTON KEYNES MK12 5TB,BUCKS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300-degrees-C in H-2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200-degrees-C) anneal after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5 x 10(16) cm-3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.

引用

页码：1612 / 1614

页数：3

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