PASSIVATION OF SHALLOW IMPURITIES IN SI BY ANNEALING IN H-2 AT HIGH-TEMPERATURE

被引：50

作者：

VELOARISOA, IA ^{[1
]}

STAVOLA, M ^{[1
]}

KOZUCH, DM ^{[1
]}

PEALE, RE ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found by infrared absorption that shallow acceptors in Si can be passivated throughout the bulk of a semiconductor sample several mm thick by annealing in H-2 at high temperature (> 900-degrees-C) and quenching to room temperature. The total number of shallow centers passivated in such samples is comparable to the number in highly doped surface layers passivated in a hydrogen plasma at lower temperature (typically < 400-degrees-C). The importance of bulk passivation techniques is discussed.

引用

页码：2121 / 2123

页数：3

共 21 条

[1]

[Anonymous], 1991, HYDROGEN SEMICONDUCT

[2] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J].

BERGMAN, K ;

STAVOLA, M ;

PEARTON, SJ ;

LOPATA, J .

PHYSICAL REVIEW B, 1988, 37 (05) :2770-2773

[3]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[4]

HALL RN, 1975, I PHYS C SER, V23, P190

[5]

HALLER EE, 1986, ADV SOLID STATE PHYS, V26, P203

[6] PROTON TUNNELING WITH MILLIELECTROVOLT ENERGIES AT THE BE-H ACCEPTOR COMPLEX IN SILICON [J].

MURO, K ;

SIEVERS, AJ .

PHYSICAL REVIEW LETTERS, 1986, 57 (07) :897-900

[7]

PEALE RE, 1991, SHALLOW IMPURITIES S, P141

[8] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[9]

PEARTON SJ, IN PRESS HYDROGEN CR

[10] OXYGEN-RELATED SI-H IR STRETCHING BANDS IN FZ-SI GROWN IN A HYDROGEN ATMOSPHERE [J].

QI, MW ;

BAI, GR ;

SHI, TS ;

XIE, LM .

MATERIALS LETTERS, 1985, 3 (11) :467-470

← 1 2 3 →