ELECTRONIC-PROPERTIES OF FLAT-BAND SEMICONDUCTOR HETEROSTRUCTURES

[1] ELECTRONIC-PROPERTIES OF THE TWO-DIMENSIONAL SYSTEM AT GAAS-ALXGA1-XASINTERFACES [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 117 - 125

[2] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3334 - 3344

[3] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[4] PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2705 - 2718

[5] SEMIMETALLIC INAS-GASB SUPER-LATTICES TO THE HETEROJUNCTION LIMIT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 30 - 32

[6] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 939 - 942

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] ELECTRONIC-PROPERTIES OF THE GAAS-ALGAAS INTERFACE WITH APPLICATIONS TO MULTI-INTERFACE HETEROJUNCTION SUPER-LATTICES [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 90 - 100

[9] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[10] HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]

[1] ELECTRONIC-PROPERTIES OF THE TWO-DIMENSIONAL SYSTEM AT GAAS-ALXGA1-XASINTERFACES [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 117 - 125

[2] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3334 - 3344

[3] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[4] PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2705 - 2718

[5] SEMIMETALLIC INAS-GASB SUPER-LATTICES TO THE HETEROJUNCTION LIMIT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 30 - 32

[6] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 939 - 942

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] ELECTRONIC-PROPERTIES OF THE GAAS-ALGAAS INTERFACE WITH APPLICATIONS TO MULTI-INTERFACE HETEROJUNCTION SUPER-LATTICES [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 90 - 100

[9] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[10] HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]