ORIENTATION-DEPENDENT STICKING COEFFICIENT IN GERMANIUM-OXYGEN SYSTEM

[1] STICKING PROBABILITY OF OXYGEN MOLECULES ON SINGLE CRYSTALS OF GERMANIUM [J]. JOURNAL OF CATALYSIS, 1964, 3 (03) : 216 - 228

[2] CALORIMETRIC DETERMINATION OF THE HEAT OF ADSORPTION OF OXYGEN ON EVAPORATED FILMS OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 117 - 123

[3] DAS SYSTEM GE/GEO/GEO2 [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1951, 266 (06): : 281 - 288

[4] DIRECT OBSERVATION OF INDIVIDUAL ADATOMS - NITROGEN ON TUNGSTEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (12) : 3233 - &

[5] EHRLICH G, 1956, J PHYS CHEM SOLIDS, V1, P3

[6] Hayward DO., 1964, CHEMISORPTION

[7] THE EQUILIBRIUM GE(S) + GEO2(S) = 2GEO(G) - THE HEAT OF FORMATION OF GERMANIC OXIDE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (22) : 5757 - 5758

[8] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3637 - &

[9] PREPARATION OF ATOMICALLY CLEAN SURFACES OF SI AND GE BY HEATING IN VACUUM [J]. APPLIED PHYSICS LETTERS, 1965, 6 (10) : 205 - &

[10] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &

[1] STICKING PROBABILITY OF OXYGEN MOLECULES ON SINGLE CRYSTALS OF GERMANIUM [J]. JOURNAL OF CATALYSIS, 1964, 3 (03) : 216 - 228

[2] CALORIMETRIC DETERMINATION OF THE HEAT OF ADSORPTION OF OXYGEN ON EVAPORATED FILMS OF GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 117 - 123

[3] DAS SYSTEM GE/GEO/GEO2 [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1951, 266 (06): : 281 - 288

[4] DIRECT OBSERVATION OF INDIVIDUAL ADATOMS - NITROGEN ON TUNGSTEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (12) : 3233 - &

[5] EHRLICH G, 1956, J PHYS CHEM SOLIDS, V1, P3

[6] Hayward DO., 1964, CHEMISORPTION

[7] THE EQUILIBRIUM GE(S) + GEO2(S) = 2GEO(G) - THE HEAT OF FORMATION OF GERMANIC OXIDE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (22) : 5757 - 5758

[8] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3637 - &

[9] PREPARATION OF ATOMICALLY CLEAN SURFACES OF SI AND GE BY HEATING IN VACUUM [J]. APPLIED PHYSICS LETTERS, 1965, 6 (10) : 205 - &

[10] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1403 - &