ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL DEPOSITION OF THALLIUM(III) OXIDE THIN-FILMS

被引:66
作者
PHILLIPS, RJ
SHANE, MJ
SWITZER, JA
机构
关键词
D O I
10.1557/JMR.1989.0923
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:923 / 929
页数:7
相关论文
共 20 条
[1]   PHOTOELECTROCHEMISTRY [J].
BARD, AJ .
SCIENCE, 1980, 207 (4427) :139-144
[2]  
BOCKRIS JO, 1977, MODERN ELECTROCHEMIS, P1218
[3]   OPTICAL AND ELECTRICAL MEASUREMENTS ON THIN THALLIUM(3) OXIDE LAYERS [J].
GESERICH, HP .
PHYSICA STATUS SOLIDI, 1968, 25 (02) :741-&
[4]  
GILEADI E, 1975, INTERFACIAL ELECTROC, P140
[6]   ELECTRICAL-CONDUCTION IN SINGLE-CRYSTAL THALLIC OXIDE .2. EFFECTS OF ANNEALING AT 923DEGREESK IN OXYGEN PRESSURES FROM 0.01 TO 1 ATMOSPHERE [J].
SHUKLA, VN ;
WIRTZ, GP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1977, 60 (5-6) :259-261
[7]   ELECTRICAL-CONDUCTION IN SINGLE-CRYSTAL THALLIC OXIDE .1. CRYSTALS AS-GROWN FROM VAPOR IN AIR [J].
SHUKLA, VN ;
WIRTZ, GP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1977, 60 (5-6) :253-258
[8]   SINGLE CRYSTAL DATA FOR TLOF AND TL2O3 [J].
SLEIGHT, AW ;
GILLSON, JL ;
CHAMBERLAND, BL .
MATERIALS RESEARCH BULLETIN, 1970, 5 (09) :807-+
[9]   ALTERNATING-CURRENT ELECTROLYSIS AT SEMICONDUCTOR ELECTRODES [J].
SWITZER, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1009-1011