SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE

被引：16

作者：

PLOOG, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.570097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs epitaxial layers were grown by the interaction of thermal molecular beams of the constitutents with a (100) oriented GaAs substrate surface heated to about 500 degree to 600 degree C. The film surfaces were studied by Auger electron spectroscopy, reflection high energy electron diffraction, and secondary ion mass spectroscopy. Structural and electronic surface states are discussed.

引用

页码：838 / 846

页数：9

共 36 条

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