SHALLOW ACCEPTOR STATES IN UNDOPED GASB

被引：7

作者：

BARANOV, AN ^{[1
]}

DYSHLOVENKO, PE ^{[1
]}

KOPYLOV, AA ^{[1
]}

SHERSTNYEV, VV ^{[1
]}

机构：

[1] VI ULYANOV LENIN ELECT ENGN INST,LENINGRAD 197022,USSR

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 06期

关键词：

D O I：

10.1016/0038-1098(90)90320-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoexcitation spectra of several acceptor states in GaSb have been observed for the first time by FIR absorption measurements. In Czochralski grown bulk crystals the acceptor level with the ionization energy of 36±2 meV was found to dominate. The acceptor levels 13±1 and 16±1 meV have been detected in epitaxial layers grown from Ga-Sb-Pb solutions. A theoretical evaluation of the double acceptor ground state energies in GaSb is performed. © 1990.

引用

页码：429 / 432

页数：4

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