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STIMULATED-EMISSION FROM A HG1-XCDXTE EPILAYER AND CDTE/HG1-XCDXTE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：10
作者：
MAHAVADI, KK
SIVANANTHAN, S
LANGE, MD
CHU, X
BLEUSE, J
FAURIE, JP
机构：
[1] Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.576947
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present the results of stimulated emission experiments performed on a Hg0 54Cd046Te epilayer, a CdTe/Hg048Cd52Te/CdTe double heterostructure, and a CdTe/Hg045Cd055Te/ Hgo.67Cdo. 33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The epilayer and the double heterostructure were found to lase continuously up to 40 K. Pulsed stimulated emission was observed from the multiquantum well separate confinement heterostructure up to 77 K. © 1990, American Vacuum Society. All rights reserved.
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页码：1210 / 1214
页数：5
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