ELECTRONIC-PROPERTIES OF AS-IMPLANTED AND P-IMPLANTED CADMIUM TELLURIDE

被引：26

作者：

CHU, M ^{[1
]}

BUBE, RH ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 02期

关键词：

D O I：

10.1149/1.2129691

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：483 / 491

页数：9

共 26 条

[1]

AGRINSKAYA NV, 1972, SOV PHYS SEMICOND+, V6, P407

[2]

ARKADEVA EN, 1967, FIZ TVERD TELA+, V8, P2260

[3]

ARKADEVA EN, 1975, SOV PHYS SEMICOND+, V9, P563

[4]

BEAN JC, 1974, 4TH P INT C IMPL SEM, P229

[5]

BEAN JC, 1976, THESIS STANFORD U

[6] DEFECT STRUCTURE OF CDTE - SELF-DIFFUSION DATA [J].

CHERN, SS ;

KROGER, FA .

JOURNAL OF SOLID STATE CHEMISTRY, 1975, 14 (01) :44-51

[7] DEFECT STRUCTURE OF CDTE - HALL DATA [J].

CHERN, SS ;

VYDYANATH, HR ;

KROGER, FA .

JOURNAL OF SOLID STATE CHEMISTRY, 1975, 14 (01) :33-43

[8] PHOTO-VOLTAIC PROPERTIES OF CDTE P-N-JUNCTIONS PRODUCED BY ION-IMPLANTATION [J].

CHU, M ;

FAHRENBRUCH, AL ;

BUBE, RH ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :322-326

[9]

CHU M, 1978, THESIS STANFORD U

[10]

DENOBEL D, 1959, PHILIPS RES REP, V14, P430

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