ELECTRONIC-PROPERTIES OF AS-IMPLANTED AND P-IMPLANTED CADMIUM TELLURIDE

被引：26

作者：

CHU, M ^{[1
]}

BUBE, RH ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1149/1.2129691

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：483 / 491

页数：9

共 26 条

[21]

RUD YV, 1972, SOV PHYS SEMICOND+, V6, P764

[22]

RUD YV, 1975, SOV PHYS SEMICOND, V5, P244

[23] DEFECT STRUCTURE OF PHOSPHORUS-DOPED CDTE [J].

SELIM, FA ;

KROGER, FA .

SELIM, FA ;

SWAMINATHAN, V ;

KROGER, FA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (02) :465-473

[25] EVIDENCE OF A DOUBLY IONIZED NATIVE DONOR IN CDTE [J].

WHELAN, RC ;

SHAW, D .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :145-&

[26] CHEMICAL DIFFUSION IN CADMIUM TELLURIDE [J].

ZANIO, K .