ELECTRONIC SWITCHING IN GE-BI-SE-TE GLASSES

被引：1

作者：

RAHMAN, S

SASTRY, GS

机构：

[1] Physics Department, Osmania University, Hyderabad

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 03期

关键词：

D O I：

10.1016/0921-5107(92)90291-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin Ge20BixSe70-xTe10 (x = 7, 9, 11 and 13) films were studied for their switching properties. It is shown that the switching characteristics can be varied by controlling the film thickness and concentration of bismuth. It was observed that films with x greater-than-or-equal-to 9 exhibited electronic switching. The results were analysed on the basis of a chemically ordered network model (CONM), where the formation of a sufficient number of heteropolar bonds is favoured over the formation of homopolar bonds.

引用

页码：219 / 222

页数：4

共 25 条

[1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].