RARE-EARTH GROWTH STRUCTURES ON GAAS(110) - CE, SM, AND YB

被引:9
作者
LI, YZ
PATRIN, JC
CHANDER, M
WEAVER, JH
机构
[1] Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 23期
关键词
D O I
10.1103/PhysRevB.44.12903
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Adsorption of the rare-earth metals Ce, Sm, and Yb on GaAs(110) at 300 K produces two bonding structures. Dual-bias scanning-tunneling-microscopy results for coverages below approximately 0.1 monolayer indicate that one, termed an A site, is dominated by unoccupied states while the other, a B site, is rich in both occupied and unoccupied states within the tunneling bias range. Sm and Yb atoms in A sites form zigzag chains of five to ten atoms along the surface [110BAR] direction while Ce atoms in A sites appear isolated. Ce, Sm, and Yb atoms in B sites form structures that are dominated by linear chains along [110BAR]. Disordered structures were readily observed for all three systems because of interfacial reaction by approximately 0.3-monolayer deposition.
引用
收藏
页码:12903 / 12907
页数:5
相关论文
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