ABOVE-BAND-GAP PHOTOLUMINESCENCE FROM SI FINE PARTICLES WITH OXIDE SHELL

被引：118

作者：

MORISAKI, H

PING, FW

ONO, H

YAZAWA, K

机构：

[1] University of Electro-Communications, Chofu-shi

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.349510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong photoluminescence with sub-band-gap photon energies has been observed in fine Si particles prepared by the gas-evaporation technique. After surface oxidation, the Si particles show above-band-gap photoluminescence, the band tail covering the visible light region. The amount of the increased apparent band gap (0.3 eV) estimated from this blueshift can be explained by a quantum-size effect expected to be observed in Si quantum dots with a diameter of 50 angstrom.

引用

页码：1869 / 1870

页数：2

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