SPIKING AT VERTICAL ELECTRICAL-TRANSPORT IN A HETEROSTRUCTURE DEVICE

被引：18

作者：

WACKER, A

SCHOLL, E

机构：

[1] Inst. fur Theor. Phys., Tech. Univ. Berlin

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we present a new model describing the electrical transport in the heterostructure hot-electron diode. As in an earlier but less sophisticated approach, we find an interesting spatiotemporal behaviour of current filaments switching on and off (spiking). Comparison with a simple generic model indicates that spiking might be a generic mechanism for many types of devices exhibiting bistability.

引用

页码：592 / 594

页数：3

共 15 条

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[2]

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