ENDOR OF A DISLOCATION CENTER IN A DEFORMED SILICON

被引：6

作者：

GRAZHULIS, VA ^{[1
]}

KVEDER, VV ^{[1
]}

OSIPYAN, YA ^{[1
]}

LEE, YH ^{[1
]}

KLEINHENZ, RL ^{[1
]}

VANCAMP, H ^{[1
]}

SCHOLES, CP ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLID,ALBANY,NY 12222

来源：

PHYSICS LETTERS A | 1978年 / 66卷 / 05期

关键词：

D O I：

10.1016/0375-9601(78)90072-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：398 / 400

页数：3

共 15 条

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[2]

Alexander H., 1975, Lattice Defects in Semiconductors, 1974, P433

[3]

BROUDE SV, 1974, SOVIET PHYS J EXPT T, V39, P721

[4]

FEHER G, 1959, PHYS REV, V114, P1213

[5]

GRAZHULI.VA, 1970, SOV PHYS JETP-USSR, V31, P677

[6]

GRAZHULIS VA, 1971, SOV PHYS JETP-USSR, V33, P623

[7]

GRAZHULIS VA, UNPUBLISHED

[8]

GRAZHULIS VA, 1970, 1969 P ALL UN C DEF

[9] SHALLOW DONOR ELECTRONS IN SILICON .I. HYPERFINE INTERACTIONS FROM ENDOR MEASUREMENTS [J].

HALE, EB ;

MIEHER, RL .

PHYSICAL REVIEW, 1969, 184 (03) :739-&

[10] MAGNETIC-PROPERTIES OF DISLOCATIONS IN SILICON [J].

SCHMIDT, U ;

WEBER, E ;

ALEXANDE.H ;

SANDER, W .

SOLID STATE COMMUNICATIONS, 1974, 14 (08) :735-739

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