ELECTRON SPIN RESONANCE IN DEFORMED SILICON

被引：29

作者：

Alexander, H. ^{[1
]}

Labusch, R.

Sander, W.

机构：

[1] Inst Metallphy, Gottingen, Germany

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 11期

关键词：

D O I：

10.1016/0038-1098(65)90125-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In Silicon crystals plastically deformed at 800 degrees C electron spin resonance signals found, which become more intensive with the dislocation density. We suppose these signals to be caused by unpaired electrons in the cores of dislocations. The formation of clusters in P-doped Si is enhanced by plastic deformation.

引用

页码：357 / 360

页数：4

共 11 条

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