1/F NOISE INTERPRETATION OF THE EFFECT OF GATE OXIDE NITRIDATION AND REOXIDATION ON DIELECTRIC TRAPS

被引：28

作者：

JAYARAMAN, R ^{[1
]}

SODINI, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期

关键词：

Semiconducting Silicon--Electronic Properties - Semiconductor Devices; MOSFET--Noise;

D O I：

10.1109/16.43833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrided gate oxides and reoxidized nitrided gate oxides have recently received considerable attention due to their increased reliability under electrical and radiation stress and their improved dopant barrier properties. However, it is also known that the process of nitridation introduces oxide charges and traps. We use l/f noise measurements in MOSFET's and the carrier number fluctuation (Mc-Whorter) model to extract the dielectric trap density in space and energy near the conduction and valence hand edges of silicon. We find that reoxidation can be used to reduce nitridation-induced interface traps to levels found in oxides. © 1990 IEEE

引用

页码：305 / 309

页数：5

共 20 条

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