1/F NOISE INTERPRETATION OF THE EFFECT OF GATE OXIDE NITRIDATION AND REOXIDATION ON DIELECTRIC TRAPS

被引:28
作者
JAYARAMAN, R [1 ]
SODINI, CG [1 ]
机构
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
关键词
Semiconducting Silicon--Electronic Properties - Semiconductor Devices; MOSFET--Noise;
D O I
10.1109/16.43833
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nitrided gate oxides and reoxidized nitrided gate oxides have recently received considerable attention due to their increased reliability under electrical and radiation stress and their improved dopant barrier properties. However, it is also known that the process of nitridation introduces oxide charges and traps. We use l/f noise measurements in MOSFET's and the carrier number fluctuation (Mc-Whorter) model to extract the dielectric trap density in space and energy near the conduction and valence hand edges of silicon. We find that reoxidation can be used to reduce nitridation-induced interface traps to levels found in oxides. © 1990 IEEE
引用
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页码:305 / 309
页数:5
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