DETERMINATION OF INTERFACE STATE DENSITY ESPECIALLY AT THE BAND EDGES BY NOISE MEASUREMENTS ON MOSFETS

[1] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[2] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[3] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[4] FLICKER (1/F) NOISE GENERATED BY A RANDOM-WALK OF ELECTRONS IN INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1100 - 1115

[5] 1-F NOISE IN SILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1517 - 1520

[6] 1/F NOISE OBSERVED ON SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (16) : 912 - &

[7] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[8] DERIVATION OF 1/F NOISE IN SILICON INVERSION LAYERS FROM CARRIER MOTION IN A SURFACE BAND [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 621 - +

[9] MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[10] 1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 965 - 970

[1] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[2] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[3] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5364 - 5371

[4] FLICKER (1/F) NOISE GENERATED BY A RANDOM-WALK OF ELECTRONS IN INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1100 - 1115

[5] 1-F NOISE IN SILICON DIODES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1517 - 1520

[6] 1/F NOISE OBSERVED ON SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (16) : 912 - &

[7] CHARACTERIZATION OF LOW 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 887 - +

[8] DERIVATION OF 1/F NOISE IN SILICON INVERSION LAYERS FROM CARRIER MOTION IN A SURFACE BAND [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 621 - +

[9] MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[10] 1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 965 - 970