1/F NOISE OBSERVED ON SEMICONDUCTOR SURFACES

被引：7

作者：

JANTSCH, O

FEIGT, I

机构：

[1] Research Laboratory of the Siemens AG, Erlangen

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 23卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.23.912

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The 1f noise on etched silicon surfaces can be influenced by adsorption and desorption of water and by heating processes. The observed time constants are the same as the constants of chemisorption. In particular a correlation of 1f noise to the density of active centers of chemisorption is found. © 1969 The American Physical Society.

引用

页码：912 / &

共 10 条

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