A THEORY OF 1/F NOISE AT SEMICONDUCTOR SURFACES

The 1 f noise at semiconductor surfaces can be explained by the model of slow surface states presented previously. According to this theory, the 1 f noise is produced by a modulation of surface recombination caused in the following manner. The chemisorbed molecules dissociate from their active centres and diffuse in the interface of the surface by Brownian motion until they are bonded again. During the removal of a chemisorbed molecule from an active centre, a chemical bond is interrupted and surface recombination is thus modulated. © 1968.