DERIVATION OF 1/F NOISE IN SILICON INVERSION LAYERS FROM CARRIER MOTION IN A SURFACE BAND

被引：30

作者：

LEVENTHAL, EA

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 06期

关键词：

D O I：

10.1016/0038-1101(68)90015-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：621 / +

页数：1

共 11 条

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[4]

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[5]

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NICOLLIAN, EH ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1965, 7 (08) :216-+

[7] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE [J].

SAH, CT ;

HIELSCHER, F .

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[8]

SHOCKLEY W, 1958, P IRE, V46, P972

[9]

SMULLIN LD, 1959, NOISE ELECTRON DE ED, P162

[10]

TALPEY TE, 1959, NOISE ELECTRON DEVIC, P162

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