THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES

[1] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[2] EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] HOFSTEIN SR, TO BE PUBLISHED

[5] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[6] LAURITZEN P, 1963, IEEE T ELECTRON DEV, V10, P334

[7] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79

[8] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464

[9] MCWHORTER AL, 1955, THESIS MASSACHUSETTS

[10] MOLL JL, 1959 IRE WESC 3, P32

[1] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[2] EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] HOFSTEIN SR, TO BE PUBLISHED

[5] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[6] LAURITZEN P, 1963, IEEE T ELECTRON DEV, V10, P334

[7] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79

[8] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464

[9] MCWHORTER AL, 1955, THESIS MASSACHUSETTS

[10] MOLL JL, 1959 IRE WESC 3, P32