1/F NOISE IN N-CHANNEL SILICON-GATE MOS-TRANSISTORS

被引：67

作者：

MIKOSHIBA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/T-ED.1982.20815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：965 / 970

页数：6

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共 29 条

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS
ABOWITZ, G
ARNOLD, E
LEVENTHA.EA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 775 - +
[2] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD
BREWS, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2193 - 2203
[3] CARRIER MOBILITIES AT WEAKLY INVERTED SILICON SURFACES
CHEN, JTC
MULLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 828 - 834
[4] EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY
CHENG, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2425 - 2427
[5] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY
CHRISTEN.S
LUNDSTRO.I
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &
[6] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS
EZAWA, H
KAWAJI, S
NAKAMURA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155
[7] THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE
FU, HS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 273 - +
[8] LATTICE SCATTERING CAUSES 1-F NOISE
HOOGE, FN
VANDAMME, LKJ
[J]. PHYSICS LETTERS A, 1978, 66 (04) : 315 - 316
[9] 1-F NOISE
HOOGE, FN
[J]. PHYSICA B & C, 1976, 83 (01): : 14 - 23
[10] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS
HSU, ST
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1451 - +