SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 775 - +

[2] BALK P, 1965, ELECTROCHEM SOC BUFF

[3] BALK P, 1965, ELECTROCHEM SOC SAN

[4] CASTRO PL, PRIVATE COMMUNICATIO

[5] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[6] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 813 - &

[7] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[8] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &

[9] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[10] GROVE AS, 1967, PHYS TECHNOL S, P326

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 775 - +

[2] BALK P, 1965, ELECTROCHEM SOC BUFF

[3] BALK P, 1965, ELECTROCHEM SOC SAN

[4] CASTRO PL, PRIVATE COMMUNICATIO

[5] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[6] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 813 - &

[7] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[8] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &

[9] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[10] GROVE AS, 1967, PHYS TECHNOL S, P326