LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS

被引：39

作者：

FLINN, I

BEW, G

BERZ, F

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(67)90166-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：833 / &

共 11 条

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[2]

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[3]

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BRUNCKE, WC .

[5]

KINGSTON RH, 1956, SEMICONDUCTOR SUR ED, P207

[6] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

MAVOR, J .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09) :1463-&

[7]

MCWHORTER AL, 1956, SEMICONDUCTOR SURFAC, P207

[8] TRANSISTOR NOISE IN CIRCUIT APPLICATIONS [J].

MONTGOMERY, HC .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1461-1471

[9] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE [J].

SAH, CT ;

HIELSCHER, F .

[10]

VANDERZIEL A, 1962, P IRE, V50, P1808