SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS

[11] EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &

[12] HAWKINS RJ, 1969, BRIT J APPL PHYS, V22, P1059

[13] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[14] HSU ST, 1970, IEEE T ELECTRON DEV, VED17, P496, DOI 10.1109/T-ED.1970.17021

[15] SURFACE STATE RELATED 1/F NOISE IN P!N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 843 - +

[16] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[17] A THEORY OF 1/F NOISE AT SEMICONDUCTOR SURFACES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 267 - +

[18] JORDAN AG, 1967, IEEE T ELECTRON DEV, VED12, P833

[19] KANAKA T, 1969, JPN J APPL PHYS, V8, P1020

[20] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79

[11] EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &

[12] HAWKINS RJ, 1969, BRIT J APPL PHYS, V22, P1059

[13] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &

[14] HSU ST, 1970, IEEE T ELECTRON DEV, VED17, P496, DOI 10.1109/T-ED.1970.17021

[15] SURFACE STATE RELATED 1/F NOISE IN P!N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 843 - +

[16] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[17] A THEORY OF 1/F NOISE AT SEMICONDUCTOR SURFACES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 267 - +

[18] JORDAN AG, 1967, IEEE T ELECTRON DEV, VED12, P833

[19] KANAKA T, 1969, JPN J APPL PHYS, V8, P1020

[20] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 59 - 79