ERBIUM COMPLEXES AND DEFECT LEVELS IN MBE-GROWN ERBIUM-DOPED GAAS AND ALGAAS

被引：14

作者：

ELSAESSER, DW

COLON, JE

YEO, YK

HENGEHOLD, RL

EVANS, KR

SOLOMON, JS

机构：

[1] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

[2] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90716-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Erbium doped GaAs and AlGaAs layers were grown using MBE at various Er concentrations. Low temperature photoluminescence (PL) measurements indicate that the most intense Er emissions occur near [Er] = 10(19) cm-3 and fall off sharply by [Er] = 6 X 10(19) cm-3. PL and lifetime measurements indicate that there are at least 3 distinct optically active centers. Electrical measurements show that Er-related hole traps in GaAs are at 35, 150, and 340 meV above the valence band.

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页码：707 / 710

页数：4

相关论文

共 13 条

[1] OSCILLATOR-STRENGTHS, QUANTUM EFFICIENCIES, AND LASER CROSS-SECTIONS OF YB-3+ AND ER-3+ IN III-V-COMPOUNDS [J].

AUZEL, F ;

JEANLOUIS, AM ;

TOUDIC, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3952-3955

[2] OPTICAL STUDIES OF ERBIUM EXCITED-STATES IN GA0.55AL0.45AS [J].

BENYATTOU, T ;

SEGHIER, D ;

GUILLOT, G ;

MONCORGE, R ;

GALTIER, P ;

CHARASSE, MN .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :350-352

[3] TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY FROM ERBIUM-DOPED GA0.55AL0.45AS [J].

BENYATTOU, T ;

SEGHIER, D ;

GUILLOT, G ;

MONCORGE, R ;

GALTIER, P ;

CHARASSE, MN .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2132-2134

[4]

COLON JE, 1991, MATER SCI FORUM, V83, P671

[5] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[6] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

WAGNER, J ;

MULLER, HD ;

SMITH, RS .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4877-4879

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ERBIUM-DOPED GAAS AND ALGAAS [J].

EVANS, KR ;

TAYLOR, EN ;

STUTZ, CE ;

ELSAESSER, DW ;

COLON, JE ;

YEO, YK ;

HENGEHOLD, RL ;

SOLOMON, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :870-872

[8]

GALTIER P, 1989, I PHYS C SER, V96, P61

[9] CHARACTERISTICS OF THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE EMISSION OF ERBIUM IONS DOPED IN INP AND THE ENERGY-TRANSFER MECHANISM [J].

ISSHIKI, H ;

SAITO, R ;

KIMURA, T ;

IKOMA, T .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) :6993-6998

[10]

JORGENSEN CK, 1971, MODERN ASPECTS LIGAN, P293