Switching Properties and Photoconduction in GaSe

被引:29
作者
Tredgold, R. H. [1 ]
Williams, R. H. [1 ]
Clark, A. [1 ]
机构
[1] New Univ Ulster, Sch Phys Sci, Coleraine, Londonderry, North Ireland
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1970年 / 3卷 / 02期
关键词
D O I
10.1002/pssa.19700030215
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Switching properties have been observed on single crystals of GaSe. It is pointed out that other single crystal materials which show this property also possess a layer structure. Furthermore it is noted that such a structure could easily result in a high density of dislocations and faults, producing what is in effect a one dimensional glass. A study of the decay of the photocurrent in GaSe gives evidence for the existence of a continuum of localized energy levels in the forbidden gap, analogous to those found in amorphous semiconductors.
引用
收藏
页码:407 / 410
页数:4
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