NEGATIVE RESISTANCE AND SWITCHING EFFECT IN SINGLE CRYSTAL LAYER COMPOUNDS SNS2 AND ZRS2

被引：53

作者：

LEE, PA

SAID, G

DAVIS, R

机构：

[1] Brighton College of Technology, Sussex England

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 18期

关键词：

D O I：

10.1016/0038-1098(69)90371-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Current controlled negative resistance has been observed in the semiconducting layér compounds SnS2 and ZrS2. A bistable switching effect has also been obtained after the application of a suitable 'forming' voltage. © 1969.

引用

页码：1359 / &

共 13 条

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