LEED INVESTIGATION OF EXTENDED DEFECTS AT THE SURFACE OF GE FILMS GROWN EPITAXIALLY ON GAAS(110)

被引：15

作者：

CLEARFIELD, HM ^{[1
]}

WELKIE, DG ^{[1
]}

LU, TM ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：323 / 330

页数：8

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