CHARACTERIZATION OF TITANIUM PASSIVATION FILMS BY IN-SITU AC-IMPEDANCE MEASUREMENTS AND XPS ANALYSIS

被引：43

作者：

DAFONSECA, C

BOUDIN, S

BELO, MD

机构：

[1] Centre d'Études de Chimie Métalurgique (C.N.R.S.), 15 Rue Georges Urbain

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1994年 / 379卷 / 1-2期

关键词：

TITANIUM PASSIVATION; AC IMPEDANCE; APS ANALYSIS;

D O I：

10.1016/0022-0728(94)87136-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Capacitance-potential measurements by ac impedance methods have shown that for polarisations of 0.5 to 0.7 V from the flat band potential, titanium passivation films formed between 0.2 and 2 V (thicknesses ranging from 15 to 100 Angstrom) display Mott-Schottky behaviour, with frequency dependent slopes. This study develops a theoretical approach which takes account of the frequency dispersion and allows the determination of flat band potentials, donor densities, and Helmholtz capacitances for the films. The Mott-Schottky behaviour was attributed to the presence of Ti3+ as the doping element. Experimental evidence for this was obtained from XPS spectra. For films formed above 2 V the linear Mott-Schottky region was difficult to define, and capacitance vs. potential plots resembled the behaviour of amorphous semiconductors.

引用

页码：173 / 180

页数：8

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[11]

DIQUARTO F, 1991, ELECTROCHIM ACTA, V36, P1811

[12] INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2 [J].