INASSB LIGHT-EMITTING-DIODES AND THEIR APPLICATIONS TO INFRARED GAS SENSORS

被引：41

作者：

DOBBELAERE, W

DEBOECK, J

BRUYNSERAEDE, C

MERTENS, R

BORGHS, G

机构：

[1] Interuniversity Micro-Electronics Center, B-3001 Leuven

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

GAS SENSORS; LIGHT EMITTING DIODES; INTEGRATED OPTICS;

D O I：

10.1049/el:19930594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs1-xSbx light emitting diodes were grown on GaAs and Si substrates by molecular beam epitaxy. The devices emit infra-red light with wavelengths between 3 and 5 mum and can be used to fabricate infra-red ps sensors.

引用

页码：890 / 891

页数：2