INAS0.85SB0.15 INFRARED PHOTODIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

DOBBELAERE, W ^{[1
]}

DEBOECK, J ^{[1
]}

HEREMANS, P ^{[1
]}

MERTENS, R ^{[1
]}

BORGHS, G ^{[1
]}

LUYTEN, W ^{[1
]}

VANLANDUYT, J ^{[1
]}

机构：

[1] UNIV ANTWERP,B-2020 ANTWERP,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8-mu-m of 1.5 X 10(11) cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0 X 10(10) cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.

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页码：3256 / 3258

页数：3

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