BACKSIDE-ILLUMINATED INAS1-XSBX-INAS NARROW-BAND PHOTODETECTORS

被引：53

作者：

CHEUNG, DT ^{[1
]}

ANDREWS, AM ^{[1
]}

GERTNER, ER ^{[1
]}

WILLIAMS, GM ^{[1
]}

CLARKE, JE ^{[1
]}

PASKO, JG ^{[1
]}

LONGO, JT ^{[1
]}

机构：

[1] ROCKWELL INT,COLL SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：587 / 589

页数：3

共 8 条

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[3]

ANDREWS AM, UNPUBLISHED

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[5] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].

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ELLIS, JM .

PHYSICAL REVIEW, 1961, 123 (05) :1560-&

[6] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

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[7] LIQUID PHASE EPITAXIAL GROWTH OF INAS1-XSBX [J].

STRINGFELLOW, GB ;

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[8]

THOM RD, 1975, P INT C APPL CHARGE, P31

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