学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
LIQUID-PHASE EPITAXIAL-GROWTH OF STEPWISE-GRADED INAS1-XSBX-INAS HETEROSTRUCTURES
被引:28
作者
:
ANDREWS, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ANDREWS, AM
[
1
]
CHEUNG, DT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CHEUNG, DT
[
1
]
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
GERTNER, ER
[
1
]
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
LONGO, JT
[
1
]
机构
:
[1]
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1976年
/ 13卷
/ 04期
关键词
:
D O I
:
10.1116/1.569029
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:961 / 963
页数:3
相关论文
共 11 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
[J].
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
: 223
-
&
[3]
ELECTRICAL PROPERTIES OF INASXSB1-X ALLOYS
CODERRE, WM
论文数:
0
引用数:
0
h-index:
0
CODERRE, WM
WOOLLEY, JC
论文数:
0
引用数:
0
h-index:
0
WOOLLEY, JC
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(10P1)
: 1207
-
+
[4]
EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(02)
: 901
-
906
[5]
CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
KISHINO, S
OGIRIMA, M
论文数:
0
引用数:
0
h-index:
0
OGIRIMA, M
KURATA, K
论文数:
0
引用数:
0
h-index:
0
KURATA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(05)
: 617
-
&
[6]
LOEBNER EE, 1974, DAAK0273C0112 CONTR
[7]
IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
LONGO, JT
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
CHU, JC
论文数:
0
引用数:
0
h-index:
0
CHU, JC
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(02)
: 107
-
&
[8]
LONGO JT, 1974, TR74174 SAMSO FIN RE
[9]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 108
-
110
[10]
REDUCTION OF DISLOCATION DENSITIES IN HETEROEPITAXIAL III-V VPE SEMICONDUCTORS
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
OLSEN, GH
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BUIOCCHI, CJ
ZAMEROWSKI, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ZAMEROWSKI, TJ
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
: 1643
-
1646
←
1
2
→
共 11 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2855
-
&
[2]
DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
ABRAHAMS, MS
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
WEISBERG, LR
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BUIOCCHI, CJ
BLANC, J
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton, 08540, NJ
BLANC, J
[J].
JOURNAL OF MATERIALS SCIENCE,
1969,
4
(03)
: 223
-
&
[3]
ELECTRICAL PROPERTIES OF INASXSB1-X ALLOYS
CODERRE, WM
论文数:
0
引用数:
0
h-index:
0
CODERRE, WM
WOOLLEY, JC
论文数:
0
引用数:
0
h-index:
0
WOOLLEY, JC
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(10P1)
: 1207
-
+
[4]
EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(02)
: 901
-
906
[5]
CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
论文数:
0
引用数:
0
h-index:
0
KISHINO, S
OGIRIMA, M
论文数:
0
引用数:
0
h-index:
0
OGIRIMA, M
KURATA, K
论文数:
0
引用数:
0
h-index:
0
KURATA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(05)
: 617
-
&
[6]
LOEBNER EE, 1974, DAAK0273C0112 CONTR
[7]
IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
论文数:
0
引用数:
0
h-index:
0
LONGO, JT
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
CHU, JC
论文数:
0
引用数:
0
h-index:
0
CHU, JC
GERTNER, ER
论文数:
0
引用数:
0
h-index:
0
GERTNER, ER
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(02)
: 107
-
&
[8]
LONGO JT, 1974, TR74174 SAMSO FIN RE
[9]
NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NAGAI, H
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NOGUCHI, Y
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 108
-
110
[10]
REDUCTION OF DISLOCATION DENSITIES IN HETEROEPITAXIAL III-V VPE SEMICONDUCTORS
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
OLSEN, GH
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BUIOCCHI, CJ
ZAMEROWSKI, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ZAMEROWSKI, TJ
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
: 1643
-
1646
←
1
2
→