NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE

被引：24

作者：

NAGAI, H ^{[1
]}

NOGUCHI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 03期

关键词：

D O I：

10.1063/1.88082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：108 / 110

页数：3

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共 8 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] LIQUID-PHASE EPITAXY OF INXGA1-XAS
ANTYPAS, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &
[3] PREPARATION OF EPITAXIAL GAXIN1-XAS
CONRAD, RW
HOYT, PL
MARTIN, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &
[4] Hilsum C., 1971, Proceedings of the European Semiconductor Device Research Conference on Solid State Devices, 1971, P77
[5] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[6] CROSS-HATCH PATTERN IN GAAS1-XPX EPITAXIALLY GROWN ON GAAS SUBSTRATE
KISHINO, S
OGIRIMA, M
KURATA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 617 - &
[7] DISLOCATIONS IN GAAS1-XPX
STRINGFELLOW, GB
GREENE, PE
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +
[8] PREPARATION AND PROPERTIES OF INXGA1-XAS SINGLE CRYSTALS BY SOLUTION GROWTH TECHNIQUE
TAKAHASHI, K
MORIIZUMI, T
SHIROSE, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1639 - +