PREPARATION AND PROPERTIES OF INXGA1-XAS SINGLE CRYSTALS BY SOLUTION GROWTH TECHNIQUE

被引：21

作者：

TAKAHASHI, K

MORIIZUMI, T

SHIROSE, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 10期

关键词：

D O I：

10.1149/1.2407801

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1639 / +

页数：1

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