P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：69

作者：

CHIANG, PK

BEDAIR, SM

机构：

[1] North Carolina State Univ at, Raleigh, Dep of Electrical &, Computer Engineering, Raleigh, NC,, North Carolina State Univ at Raleigh, Dep of Electrical & Computer Engineering, Raleigh, NC, US

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.95640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：383 / 385

页数：3

共 12 条

[1] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD
CHIANG, PK
BEDAIR, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2422 - 2426
[2] CHIANG PK, 1985, THESIS N CAROLINA ST
[3] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS
FUKUI, T
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L53 - L56
[4] GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB
HOLMES, DE
KAMATH, GS
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) : 95 - 110
[5] ZN-DIFFUSION-INDUCED DAMAGE IN INSB DIODES
MOZZI, RL
LAVINE, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 280 - &
[6] EPITAXIAL-GROWTH OF INAS1-XSBX ALLOYS BY MOCVD
NATAF, G
VERIE, C
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 87 - 91
[7] INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY
NOREIKA, AJ
TAKEI, WJ
FRANCOMBE, MH
WOOD, CEC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4932 - 4937
[8] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895
[9] SCHAFFER WJ, 1981, 3RD MBE WORKSH U CAL
[10] LIQUID PHASE EPITAXIAL GROWTH OF INAS1-XSBX
STRINGFELLOW, GB
GREENE, PE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 805 - +

← 1 2 →