GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB

[1] MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) : 199 - 204

[2] IN-GA-SB TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1831 - &

[3] Cabrera N., 1958, GROWTH PERFECTION CR, P393

[4] Cabrera N.B., 1963, ART AUSTR, P3

[5] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[6] BAKING EFFECT ON SURFACE MORPHOLOGY OF GAAS-ALGAAS LPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 2081 - 2082

[7] SOME THEOREMS ON THE FREE ENERGIES OF CRYSTAL SURFACES [J]. PHYSICAL REVIEW, 1951, 82 (01): : 87 - 93

[8] HOLMES DF, UNPUBLISHED

[9] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[10] HSIEH JJ, 1977, I PHYS C GAAS, P74

[1] MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) : 199 - 204

[2] IN-GA-SB TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1831 - &

[3] Cabrera N., 1958, GROWTH PERFECTION CR, P393

[4] Cabrera N.B., 1963, ART AUSTR, P3

[5] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[6] BAKING EFFECT ON SURFACE MORPHOLOGY OF GAAS-ALGAAS LPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) : 2081 - 2082

[7] SOME THEOREMS ON THE FREE ENERGIES OF CRYSTAL SURFACES [J]. PHYSICAL REVIEW, 1951, 82 (01): : 87 - 93

[8] HOLMES DF, UNPUBLISHED

[9] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[10] HSIEH JJ, 1977, I PHYS C GAAS, P74