MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT

被引：21

作者：

BALIGA, BJ ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90046-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：199 / 204

页数：6

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[1] BALIGA BJ, 1977, MAY EL SOC M, P309
[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS
BAUSER, E
FRIK, M
LOECHNER, KS
SCHMIDT, L
ULRICH, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 148 - 153
[3] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY
CROSSLEY, I
SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) : 160 - 168
[4] DETERMINATION OF UNDERCOOLING NECESSARY TO INITIATE EPITAXIAL-GROWTH OF GAAS FROM SOLUTION IN GA
CROSSLEY, I
SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) : 275 - &
[5] D'Asaro L. A., 1969, Semiconductor silicon, P233
[6] DELVES RT, 1975, CRYST GROWTH, pCH3
[7] ELWELL D, 1975, CRYST GROWTH, pCH6
[8] HABERECHT RR, 1969, SEMICONDUCTOR SILICO
[9] KNIGHT CA, 1967, FREEZING SUPERCOOLED, P86
[10] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
HARRIS, JS
CHU, JC
GERTNER, ER
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) : 107 - &