EPITAXIAL-GROWTH OF INAS1-XSBX ALLOYS BY MOCVD

被引：13

作者：

NATAF, G

VERIE, C

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90275-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：87 / 91

页数：5

共 13 条

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[3] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS [J].

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GIBART, P ;

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[6]

LEROUX M, 1979, THESIS PARIS 6

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MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

[8] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].

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[9]

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[10]

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