ULTRAFAST DIFFUSION OF A DEFECT IN INDIUM-DOPED SILICON INTRODUCED BY CHEMOMECHANICAL POLISHING

被引：36

作者：

ZUNDEL, T ^{[1
]}

WEBER, J ^{[1
]}

BENSON, B ^{[1
]}

HAHN, PO ^{[1
]}

SCHNEGG, A ^{[1
]}

PRIGGE, H ^{[1
]}

机构：

[1] WACKER CHEMITRON GMBH,RES CTR,D-8263 BURGHAUSEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1426 / 1428

页数：3

共 10 条

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