NEUTRALIZATION OF ACCEPTORS AND FORMATION OF AGGLOMERATES IN SILICON-WAFERS DUE TO INTRINSIC POINT-DEFECTS CREATED BY CHEMOMECHANICAL POLISHING AND BY QUENCHING

被引：15

作者：

REICHEL, J

SEVCIK, S

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 103卷 / 02期

关键词：

D O I：

10.1002/pssa.2211030210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：413 / 420

页数：8

共 35 条

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