NEW DONOR FORMATION IN N-TYPE CZOCHRALSKI-GROWN SILICON

被引：18

作者：

FUKUOKA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 11期

关键词：

D O I：

10.1143/JJAP.24.1450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1450 / 1453

页数：4

共 18 条

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[4] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92
[5] GRINSHTEIN PM, 1978, SOV PHYS SEMICOND+, V12, P68
[6] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626
[7] Iizuka T., 1982, Oyo Buturi, V51, P1269
[8] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
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[9] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON
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[J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756
[10] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8095 - 8101