OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON

被引：234

作者：

GOSELE, U ^{[1
]}

TAN, TY ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 02期

关键词：

D O I：

10.1007/BF00617135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 92

页数：14

共 134 条

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[7] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].

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[8]

CLAEYS C, 1981, SEMICONDUCTOR SILICO, P780

[9]

CLAEYS CL, 1978, SEMICONDUCTOR CHARAC, P366

[10]

CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773

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