INFLUENCE OF OXYGEN ON SILICON RESISTIVITY

[1] CAPPER P, 1977, J APPL PHYS, V48

[2] CAZCARRA V, 1979, 46 I PHYS C SER, P303

[3] CRABEELS F, 1963, THESIS U LOUVAIN

[4] FULLER CS, 1954, PHYS REV, V96, P833

[5] GORRY A, COMMUNICATION

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[7] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[8] Kaiser W., 1956, PHYS REV, V101, P1254

[9] PAJOT B, 1977, ANALUSIS, V5, P293

[10] SZE SM, 1966, SOLID STATE ELECTRON, V9, P143

[1] CAPPER P, 1977, J APPL PHYS, V48

[2] CAZCARRA V, 1979, 46 I PHYS C SER, P303

[3] CRABEELS F, 1963, THESIS U LOUVAIN

[4] FULLER CS, 1954, PHYS REV, V96, P833

[5] GORRY A, COMMUNICATION

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[7] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[8] Kaiser W., 1956, PHYS REV, V101, P1254

[9] PAJOT B, 1977, ANALUSIS, V5, P293

[10] SZE SM, 1966, SOLID STATE ELECTRON, V9, P143