OPTICAL ABSORPTION OF HEAT TREATED SILICON

被引:9
作者
ARAI, T
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10.1143/JPSJ.17.246
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O4 [物理学];
学科分类号
0702 ;
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页码:246 / &
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共 5 条
[1]   DONOR EQUILIBRIA IN THE GERMANIUM-OXYGEN SYSTEM [J].
FULLER, CS ;
KAISER, W ;
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) :301-307
[2]   INFRARED SPECTRA OF HEAT TREATMENT CENTERS IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
PHYSICAL REVIEW LETTERS, 1958, 1 (06) :199-200
[3]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[4]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756
[5]  
KAISER W, 1960 P INT C SEM PHY