OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON

被引：234

作者：

GOSELE, U ^{[1
]}

TAN, TY ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 28卷 / 02期

关键词：

D O I：

10.1007/BF00617135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 92

页数：14

共 134 条

[11] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&

[12]

CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[13] A MODEL FOR OXIDATION OF SILICON BY OXYGEN [J].

CRISTY, SS ;

CONDON, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) :2170-2174

[14] CURRENT TRENDS IN SILICON RESEARCH [J].

ELWELL, D .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (04) :297-316

[15]

EUCKEN A, 1951, LANDOLTBORNSTEIN 2, V1, P32

[16] FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].

FOLL, H ;

GOSELE, U ;

KOLBESEN, BO .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108

[17] MICRODEFECTS IN SILICON AND THEIR RELATION TO POINT-DEFECTS [J].

FOLL, H ;

GOSELE, U ;

KOLBESEN, BO .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :907-916

[18]

FOLL H, 1977, SEMICONDUCTOR SILICO, P565

[19] SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING [J].

FRANK, W .

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 :221-242

[20]

Frank W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P31

← 1 2 3 4 5 6 7 8 9 10 →