MICRODEFECTS IN SILICON AND THEIR RELATION TO POINT-DEFECTS

被引：30

作者：

FOLL, H

GOSELE, U

KOLBESEN, BO

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER

[2] SIEMENS AG,GRUNDLAGENENTWICKLUNG HALBLEITERMAT,D-8000 MUNICH 80,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90397-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：907 / 916

页数：10

共 37 条

[1] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J].

CHIKAWA, J ;

SHIRAI, S .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :328-340

[2]

CHIKAWA J, 1979, JAPAN J APPL PHY S18, V18, P153

[3] EFFECT OF DOPING ON MICRODEFECT FORMATION IN AS-GROWN DISLOCATION-FREE CZOCHRALSKI SILICON-CRYSTALS [J].

DEKOCK, AJR ;

STACY, WT ;

VANDEWIJGERT, WM .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :611-613

[4] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320

[5]

DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83

[6]

DEKOCK AJR, 1977, 1976 CRYSTAL GROWTH, P662

[7]

DEKOCK AJR, 1973, PHILIPS RES REPT S1

[8]

DEKOCK AJR, 1977, SEMICONDUCTOR SILICO, P508

[9] INTERFACE STRUCTURE AND CRYSTAL-GROWTH FROM MELT - MODEL THEORY [J].

FLETCHER, NH .

JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) :39-48

[10] FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].

FOLL, H ;

GOSELE, U ;

KOLBESEN, BO .

JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108

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