MICRODEFECTS IN SILICON AND THEIR RELATION TO POINT-DEFECTS

被引：30

作者：

FOLL, H

GOSELE, U

KOLBESEN, BO

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER

[2] SIEMENS AG,GRUNDLAGENENTWICKLUNG HALBLEITERMAT,D-8000 MUNICH 80,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(81)90397-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：907 / 916

页数：10

共 37 条

[31] EFFECT OF RECONSTRUCTION DURING EPITAXIAL-GROWTH [J].

VANVECHTEN, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :992-998

VANVECHTEN, JA .

[33] SIMPLE BALLISTIC MODEL FOR VACANCY MIGRATION [J].

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1975, 12 (04) :1247-1251

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1978, 17 (08) :3197-3206

[35] POINT DEFECT TRAPPING IN CRYSTAL GROWTH [J].

WEBB, WW .

YASUAMI, S ;

HARADA, J ;

WAKAMATSU, K .

[37]

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